When base current is removed the transistor becomes fully off, this stage is called as the Cut-off Region and the Base Emitter voltage could be around 660 mV. This stage is called Saturation Region and the typical voltage allowed across the Collector-Emitter (V CE) or Base-Emitter (V BE) could be 200 and 900 mV respectively. It has a collector current of 0.6A and a Collector-Emitter voltage of 40V. It is made of silicon material and specially. The MMBT2222A is the SMD (SOT-23) version of the popular 2N2222A Transistor. When this transistor is fully biased then it can allow a maximum of 800mA to flow across the collector and emitter. 2N2222 NPN transistor has been commonly used for switching and very high frequency(VHF) amplifier applications. It can also be used for pulse width modulation as its response time is fast. 2N2222 is used for switching applications or low power amplifying. Thus, a low current at the base terminal can be used to drive a high current between two other terminals. To bias a transistor we have to supply current to base pin, this current (I B) should be limited to 5mA. 2N2222 is a current-controlled transistor. This NPN silicon planar switching transistor is. Transistor Polarity: NPN Collector Emitter Voltage V(br)ceo: 30V Power Dissipation Pd: 500mW DC Collector Current. The maximum amount of current that could flow through the Collector pin is 800mA, hence we cannot connect loads that consume more than 800mA using this transistor. The 2N2222 from Multicomp Pro is a through hole, low power bipolar transistor in TO-18 metal can package. 2N2222A has a gain value of 110 to 800, this value determines the amplification capacity of the transistor. 2N2222A is a NPN transistor hence the collector and emitter will be left open (Reverse biased) when the base pin is held at ground and will be closed (Forward biased) when a signal is provided to base pin.
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